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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities. (1) Pulse Width
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * Fast Switching -- tf = 90 ns (Max) * Key Parameters Specified @ 100_C * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 V (Max) @ 8.0 A * Complementary Pairs Simplify Circuit Designs
Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C
Collector Current -- Continuous -- Peak (1)
Emitter Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
v 6.0 ms, Duty Cycle v 50%.
Characteristic
Rating
Symbol
Symbol
TJ, Tstg
VCEO
VCEV
RJC
RJA
VEB
IC ICM
PD
TL
- 55 to 150
Value
62.5
Max
83 0.67
275
100
1.5
7.0
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
15 20
80
D44VH PNP D45VH
CASE 221A-06 TO-220AB
Order this document by D44VH/D
NPN
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Vdc
Vdc
Vdc
_C
_C
1
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D44VH D45VH
(1) Pulse Test: Pulse Width SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Storage Time
Rise Time
Delay Time
Output Capacitance (VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
Current Gain Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz)
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 0.8 Adc) (IC = 8.0 Adc, IB = 0.4 Adc, TC = 100_C) (IC = 8.0 Adc, IB = 0.8 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) (IC = 8.0 Adc, IB = 0.8 Adc) (IC = 15 Adc, IB = 3.0 Adc, TC = 100_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (IC = 4.0 Adc, VCE = 1.0 Vdc)
Emitter Base Cutoff Current (VEB = 7.0 Vdc, IC = 0)
Collector-Emitter Cutoff Current (VCE = Rated VCEV, VBE(off) = 4.0 Vdc) (VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (1) (IC = 25 mAdc, IB = 0)
2
v 300 s, Duty Cycle v 2%.
Characteristic
(VCC = 20 Vdc, IC = 8.0 Adc, IB1 = IB2 = 0.8 Adc)
D44VH10 D45VH10 D44VH10 D45VH10
D44VH10 D45VH10 D44VH10 D45VH10
D44VH10 D45VH10
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
Motorola Bipolar Power Transistor Device Data
IEBO ICEV Cob hFE fT td ts tr tf Min 35 20 80 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ 120 275 50 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 10 100 700 250 1.2 1.0 1.1 1.5 0.4 1.0 0.8 1.5 50 10 -- -- -- -- -- -- 90 Adc Adc MHz Unit Vdc Vdc Vdc pF ns --
D44VH D45VH
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
D44VH D45VH
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*D44VH/D*
D44VH/D

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